Conductance fluctuations of monolayer GeSnH2 in the topological phase using a low-energy effective tight-binding Hamiltonian

Conductance fluctuations of monolayer GeSnH2 in the topological phase using a low-energy effective tight-binding Hamiltonian
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doi
10.1103/PhysRevB.99.115421
Article type
Journal
https://people.iut.ac.ir/en/fazileh/content/1610368