Dr S. Javad Hashemifar

hashemifar@iut.ac.ir
Office
Department of Physics, Isfahan University of Technology
Phone
0098-31-3391-3732
Fax
0098-31-3391-2376
Positions
Professor of Condensed Matter Physics
Research Interests
Computational Material Science
Artificial Intelligence for Materials Science
Defect in Semiconductors
More Articles
Journal Papers
Title DOI type
Adsorption behavior of hydrogen sulfide in the channels of Li-ABW zeolite: A study using density functional theory 10.1016/j.jmgm.2024.108765 Journal
First-principles calculations of the structural and optoelectronic properties of honeycomb borophene: strain and many-body effects 10.1140/epjp/s13360-024-05166-3 Journal
Driven charge density modulation by spin density wave and their coexistence interplay in SmFeAsO: A first-principles study 10.1016/j.physb.2023.415603 Journal
Statistical analysis of the performance of a variety of first-principles schemes for accurate prediction of binary semiconductor band gaps 10.1063/5.0138775 Journal
Role of the band-gap parameter in the characterization of Landau levels in a gapped-phase semi-Dirac system: Monolayer phosphorene 10.1103/PhysRevB.107.125417 Journal
Novel first-principles insights into graphene fluorination 10.1063/5.0091279 Journal
Prediction of novel two-dimensional Dirac nodal line semimetals in Al<sub>2</sub>B<sub>2</sub> and AlB<sub>4</sub> monolayers 10.1039/D2NR00888B Journal
Decrypting the photocatalytic bacterial inactivation of hierarchical flower-like Bi2WO6 microspheres induced by surface properties: Experimental studies and ab initio calculations 10.1016/j.cej.2021.131768 Journal
First-Principles Investigation of CH4 Adsorption on a Singly and Doubly Decorated (8,0) Single Wall Carbon Nanotube With Palladium/Oxygen Species 10.1109/ACCESS.2021.3107844 Journal
Ab initio calculation of structural, electronic, and optical properties of TlxGa1-xAs ternary alloys 10.1016/j.cocom.2020.e00505 Journal